Samsung Introduces 4F Cell Structure, Breaking 10nm DRAM Barrier and Increasing Density by Up to 50%

Samsung has made headlines by producing the world’s first standalone DRAM module utilizing a process technology that falls below the 10nm threshold.

Samsung’s Groundbreaking Sub-10nm DRAM Technology Enhances Density and Utilizes Innovative Materials

The DRAM industry has traditionally relied on a 10nm process technology standard, which encompasses various iterations such as 1x, 1y, 1a, 1b, 1c, and 1d. However, Samsung is pioneering a new approach with its upcoming 10a process technology, which is set to dip below the official 10nm limit.

Samsung Electronics has produced the world’s first single-digit nanometer DRAM working die. It is reported that the company plans to rapidly secure yield by adjusting process conditions based on the working die.

According to industry sources on the 24th, Samsung Electronics reportedly confirmed a working die during the process of inspecting die characteristics after producing wafers using the 10a process last month. This is the result of the first application of the 4F square cell structure and the Vertical Channel Transistor (VCT) process.

via The ELEC

The new 10a process technology is projected to achieve dimensions between 9.5nm and 9.7nm, marking a significant industry milestone as the inaugural sub-10nm process. The transformative elements enabling this advancement include the innovative “4F Square Cell Structure”and the Vertical Channel Transistor (VCT) technique.

Samsung aims to finalize the development of its 10a DRAM technology within this year, with plans for mass production expected by 2028. The enhancements introduced with 10a will serve as a foundation for future iterations, specifically 10b and 10c, while the 10d version is anticipated to shift towards 3D DRAM technology by 2029-2030.

Currently, most DRAM products employ a 6F structure, resulting in a rectangular shape measuring 3Fx2F. The transition to a 4F structure yields a square form of 2Fx2F, allowing DRAM manufacturers to achieve a remarkable 30-50% increase in cell density per integrated circuit. This upgrade not only enhances capacity but also contributes to more efficient power consumption.

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In addition, Samsung’s new DRAM technology will incorporate advanced materials like Indium Gallium Zinc Oxide (IGZO), replacing traditional silicon used in earlier products. The use of IGZO mitigates leakage in narrower cells, promoting better data retention.

Competitors, including Micron, are currently deferring their 4F developments, opting instead to focus on 3D DRAM solutions. Chinese manufacturers face challenges in producing advanced 3D DRAM due to limited access to cutting-edge lithography tools. Nevertheless, the design of 3D DRAM shares similarities with that of 3D NAND, potentially offering Chinese firms a route to innovation. Meanwhile, the race to develop 3D DRAM is accelerating, fueled by increasing demand in the AI sector.

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Samsung Introduces 4F Cell Structure, Breaking 10nm DRAM Barrier and Increasing Density by Up to 50%

Samsung’s Groundbreaking Sub-10nm DRAM Technology Enhances Density and Utilizes Innovative Materials

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