Samsung Delays HBM5E Memory Production Indefinitely Due to Underperforming D1d DRAM Yields

Samsung’s cutting-edge 1d DRAM (7th Generation 10nm) designed for future High Bandwidth Memory (HBM) solutions faces challenges that may delay its entry into production due to unsatisfactory yield rates.

Delays in Production for Samsung’s Next-Generation HBM5E Memory

According to a recent report from IT Chosun, Samsung is reconsidering the mass production of its 1d “D1d”DRAM, which is based on advanced 10nm process technology, due to subpar yield performance. This situation may lead the tech giant to halt plans for its next-generation HBM solutions.

Although the DRAM technology had previously achieved pre-production approval (PRA), concerns have emerged regarding the return on investment (ROI) for initiating a trial run or advancing towards full-scale manufacturing, mainly because the actual yields do not meet established targets.

“Samsung Electronics plans to postpone mass production indefinitely until the D1d yield reaches the target level, and as of now, the resumption date has not been determined, ”noted a source with insider knowledge of Samsung’s operations.“They are focusing on further increasing the yield by completely re-examining the process roadmap.”

Machine Translated via IT Chosun

The success of Samsung’s D1d DRAM technology is crucial to the future roadmap of its HBM memory, particularly for the anticipated HBM5E, the 9th Generation HBM solution expected to emerge from the company.

Close-up image of a Samsung semiconductor chip displaying a grid with golden contacts. — Image Credits: Samsung

Currently, the 1c DRAM technology is utilized across three HBM generations: HBM4, HBM4E, and HBM5. The rollout of HBM4 is anticipated later this year, primarily aimed at powering NVIDIA’s Vera Rubin and AMD’s MI400 platforms, while HBM4E will likely support the Rubin Ultra and MI500 accelerators. Additionally, HBM5 and customized designs are projected to be adopted in NVIDIA’s Feynman series and other competing offerings.

Recently, it was reported that Samsung intends to significantly shorten its HBM development cycle. While this strategy may speed up the preparation of new HBM solutions, it does not guarantee they will be fully ready for production. The differentiation between the development phase and the production cycle highlights production readiness as a potential bottleneck—a point emphasized in the latest analysis.

Additionally, Samsung Electronics has committed substantial resources to the construction of an expansive chip fabrication plant in Onyang, South Korea. This facility, which is comparable in size to four soccer fields, is set to produce next-generation DRAM products, including HBM. It will handle all stages of production—from packaging and testing to logistics and quality control—ensuring a high standard for ongoing production activities.

[EXCLUSIVE] Samsung Electronics to Build New Semiconductor Fab the Size of “4 Soccer Fields”in Onyang… To Become Core Back-end Process Hub. Samsung Electronics is restructuring its competitive stance in HBM (High Bandwidth Memory) toward back-end processes.pic.twitter.com/WFZdao3MVI

— Jukan (@jukan05) April 21, 2026

In the rapidly evolving semiconductor landscape, companies are vying for significant partnerships with top AI firms. The key to success lies in diversifying HBM strategies and ensuring consistent development and production plans while maintaining satisfactory yields and a solid ROI.

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