Intel’s ZAM Memory: Low-Power, High-Density HBM Alternative Receives Significant Support from Japan

Intel has exciting news regarding its ZAM memory initiative, which is under development in collaboration with SoftBank’s subsidiary, SAIMEMORY. The project has recently gained significant momentum with the support of Japan.

Japan Fast-Tracks ZAM Memory Development in Collaboration with Intel and SoftBank

In a recent announcement, Intel Kabushiki Kaisha (Intel K. K.) and SAIMEMORY disclosed that Japan’s New Energy and Industrial Technology Development Organization (NEDO) has officially chosen ZAM—a cutting-edge memory standard envisioned as a successor to High Bandwidth Memory (HBM).

The next-generation memory development project, which we are jointly promoting with SAIMEMORY and announced at this year’s annual event, Intel Connection Japan 2026, has been selected for a grant from NEDO (New Energy and Industrial Technology Development Organization).This will enable us to develop Z-Angle Memory (ZAM), a next-generation stacked DRAM architecture for the AI era… pic.twitter.com/G8vE17gKb2

— Intel [Official] (@IntelJapan) April 24, 2026

This endorsement from NEDO means that the project will receive funding through government subsidies, expediting its advancement to tackle the ongoing challenges posed by memory shortages, particularly in artificial intelligence (AI) and high-performance computing (HPC) sectors.

Launched earlier this year, the ZAM project aims to address the current memory crisis in partnership with SoftBank. ZAM, or Z-Angle Memory, is engineered for high-density, wide-bandwidth, and low-power consumption. The initiative will leverage a global network of technology, manufacturing, and supply chain partners, which is crucial for its development and large-scale commercialization.

“Intel has spent years proving the science behind ZAM, from DOE national laboratories to our Next Generation DRAM Bonding initiative. We believe this award puts that work on a fast track to global deployment and strengthens the kind of U. S.-Japan technology partnership that will matter enormously in the years ahead.” – Makoto Ohno, President of Intel K. K.

On the technical side, Intel’s ZAM (Z-Angle Memory) is poised to reduce power consumption by 40-50%, feature a simplified design for easier manufacturing, and support densities of up to 512 GB per chip. Each ZAM memory stack will consist of densely layered DRAM ICs, interconnected via Z-Angle interconnects, with connectivity to the primary compute chip established via Embedded Multi-Die Interconnect Bridge (EMIB) situated beneath the base die.

A presentation slide titled 'AI Supercycle' highlights partnerships between Intel, SoftBank, and SAIMEMORY, emphasizing ZAM (Z-Angle Memory) and its benefits in memory design driven by power and thermal constraints. — Image Credits: PCWatch

The upcoming ZAM introduction marks a significant return for Intel to the memory market after several decades. Historically, Intel was a leader in memory production before losing ground to Japanese companies, and now, these same firms are instrumental in realizing the ZAM vision.

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