Samsung Launches HBM4 Memory Production Featuring Up to 13 Gbps Speeds and 48 GB Capacity

Samsung has officially begun the mass production and shipment of its next-generation HBM4 memory, boasting incredible speeds of up to 13 gigabits per second and support for capacities reaching 48 gigabytes.

Samsung Sets New Standard with HBM4 Memory Production

Press Release: Samsung Electronics, a frontrunner in advanced memory solutions, has announced that it has initiated the mass production of its groundbreaking HBM4 memory. This accomplishment distinguishes Samsung as the first company in the industry to achieve commercial shipments of this technology, solidifying its leadership role in the HBM4 market.

Samsung HBM4 chip with circuit layout — Image Source: Samsung

Utilizing its cutting-edge 6th-generation 10-nanometer (nm) DRAM process, Samsung has notably achieved stable yields and superior performance from the outset, with no need for further redesigns.

Performance and Efficiency Redefined

The HBM4 memory from Samsung reaches a sustained processing speed of 11.7 gigabits per second (Gbps), surpassing the established industry standard of 8 Gbps by approximately 46%.This sets a significant benchmark for memory performance, representing a notable upgrade over the previous HBM3E standard, which offered a maximum pin speed of 9.6 Gbps. Furthermore, the HBM4 technology paves the way for enhanced speeds of up to 13 Gbps, effectively alleviating data bottlenecks, particularly beneficial as AI model demands increase.

In addition, HBM4 achieves a total memory bandwidth of up to 3.3 terabytes per second (TB/s) per stack, representing an impressive 2.7 times increase compared to HBM3E.

Samsung semiconductor chips — Image Source: Samsung

Employing a sophisticated 12-layer stacking technique, HBM4 is available in capacities ranging from 24 GB to 36 GB, with plans to offer configurations up to 48 GB through 16-layer stacking in alignment with future customer requirements.

To tackle the rising challenges of power consumption and thermal management—resulting from doubling the data I/Os from 1, 024 to 2, 048 pins—Samsung’s design incorporates state-of-the-art low-power solutions within the core die. HBM4 also demonstrates an impressive 40% increase in power efficiency, using advanced TSV technology and optimized PDN, which enhances thermal resistance by 10% and heat dissipation by 30% in comparison to HBM3E.

This exceptional combination of high performance, energy efficiency, and reliability makes Samsung’s HBM4 an invaluable asset for future datacenter environments, enabling customers to maximize GPU throughput and effectively handle their total cost of ownership (TCO).

Agile Production Capabilities for Growing HBM Market

Samsung’s commitment to enhancing its HBM roadmap is bolstered by one of the largest DRAM production capacities and dedicated manufacturing infrastructures in the sector. This ensures a resilient supply chain that can accommodate the anticipated surge in HBM4 demand.

The company’s integrated Design Technology Co-Optimization (DTCO) between its Foundry and Memory segments guarantees the highest level of quality and yield. With extensive in-house expertise in advanced packaging, Samsung streamlines its production processes, minimizing lead times while optimizing output.

Samsung truck with AI systems branding — Image Source: Samsung

Looking ahead, Samsung plans to expand its technical collaborations with key partners, engaging with global GPU manufacturers and hyperscalers focused on developing next-generation ASICs.

According to forecasts, Samsung anticipates that its HBM sales will more than triple by 2026 compared to 2025 figures, prompting the company to proactively enhance HBM4 production capacity. Following the successful market entry of HBM4, sampling for HBM4E is anticipated to commence in the latter half of 2026, with custom HBM samples expected to begin reaching customers in 2027, tailored to specific requirements.

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