SK hynix’s 2029-2031 Roadmap: HBM5/HBM5E, GDDR7 Next-Gen, DDR6, and 400+ Layer 4D NAND Innovations

SK hynix has unveiled an ambitious technology roadmap that extends beyond 2029, featuring advancements in HBM5, GDDR7-next, DDR6, and revolutionary 400+ Layer 4D NAND solutions.

SK hynix’s Next-Generation DRAM and NAND Roadmap: Key Developments for 2029-2031

Preview of the We AI Summit 2025 – Roadmap for DRAM & NAND (2026-2028)

In the lead-up to 2026-2028, We hynix is poised to introduce HBM4 with configurations of 16-Hi and HBM4E in 8/12/16-Hi variants, alongside a tailored HBM solution. This initiative aims to enhance memory performance significantly.

SK hynix's Roadmap Positions HBM5/HBM5E, GDDR7-Next, DDR6 & 400+ Layer 4D NAND In 2029-2031

The innovative custom HBM solution reallocates the HBM controller to the base die, optimizing the integration of various IP components like protocols. This strategic move allows GPU and ASIC manufacturers to augment the silicon area available for computing. Furthermore, this customized design is expected to lower interface power consumption, enhancing efficiency. In collaboration with TSMC, We hynix is making strides toward this next-level HBM solution.

NAND Developments and Future Directions

On the NAND front, We hynix is introducing standard solutions such as PCIe Gen5 eSSD, boasting capacities exceeding 245 TB+ utilizing QLC technology, along with PCIe Gen6 eSSD/cSSD, UFS 5.0, and AI-enhanced “AI-N”NAND solutions.

Future Expectations for Graphics and Memory Technologies

The forthcoming GDDR7-next indicates a gap in advancement for discrete graphics cards. The initial rollout of GDDR7 will be limited to 30-32 Gbps, reaching a maximum of 48 Gbps. Given the projected potential of this standard, widespread utilization at peak capacity may not materialize until around 2027-2028.

Additionally, scheduled introductions of DDR6 between 2029 and 2031 suggest that users of conventional desktop and laptop PCs should not expect enhancements beyond DDR5 for several more years.

AI-N SSD solutions presentation at SK AI Summit 2025.

Memory modules overview at SK AI Summit 2025, showcasing new developments.

High-Bandwidth Flash is poised to meet the emerging AI inference demands for the next generation of personal computing technologies, and it will be intriguing to observe its practical applications and effectiveness in real-world scenarios.

Full Stack AI Memory Lineup

– Current memory solutions prioritize computing, yet the future is shifting towards diversifying memory’s role to enhance computing resource utilization and resolve AI inference bottlenecks.

– With the AI market’s growth trending towards efficiency and optimization, the evolution of HBM into customized products will cater to specific customer needs, thus maximizing GPU and ASIC performance while reducing data transfer power consumption.

– The development of “AI-D” DRAM illustrates a commitment to advancing both compatibility and performance. This includes:

“AI-D O (Optimization)” – A low-power, high-performance DRAM aimed at lowering total ownership costs and enhancing operational efficiency.

“AI-D B (Breakthrough)” – A solution delivering ultra-high-capacity memory with versatile allocation capabilities.

“AI-D E (Expansion)” – Extending DRAM applications into robotics, mobility, and industrial automation sectors.

While these innovations are still a few years away, the impending advancements promise to revolutionize the tech landscape, making the wait worthwhile.

News Source: Harukaze5719

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