SK Hynix Unveils High-Speed DDR5 Chips with Native Speeds Up to 7200 MT/s
SK Hynix has recently made headlines in the memory market by unveiling a range of new DDR5 chips capable of achieving impressive native speeds of 7200 MT/s. These developments were noted on various e-commerce platforms, indicating that the chips may soon be available for purchase.
Upon examining these DDR5 modules, one can spot fresh part numbers, which currently are not listed in the market. This suggests that We Hynix is gearing up for a significant product launch.




| Part Number | The | Speed | Density |
|---|---|---|---|
| H5CG48CKBD-X030 | C-die | 7200 MT/s | 2 Gb |
| H5CGD8AKBD-X021 | A-die | 7200 MT/s | 3 Gb |
| H5CG58MKBD-X051 | M-die | 7200 MT/s | 4 Gb |
| H5CC48BKBD-X030 | B-the | 7200 MT/s | 2 Gb |
Notably, We Hynix has launched a novel 2 Gb B-die model, along with an updated M-die featuring a 4 Gb capacity. The introduction of a 4 Gb M-die is noteworthy as it is the first instance of this particular process node exhibiting such density. Although 4 Gb might be less compared to the more common 16 Gb or 24 Gb dies typically seen in higher-capacity DDR5 modules, these components are likely designed for high-speed, low-density DDR5 configurations.

It is crucial to note that for these high-performance DDR5 RAM modules to achieve and maintain such speeds—especially when overclocked—they will require at least a 10-layer or 12-layer printed circuit board (PCB).Although We Hynix has yet to formally announce the market release of these 7200 MT/s memory chips, preliminary findings confirm the company is poised to take significant strides in the DDR5 memory landscape.
For more insights on this announcement, you can refer to the original source and images.
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