
In a groundbreaking development within the semiconductor industry, We Hynix has made history by being the first company to implement ASML’s High-NA EUV equipment at its manufacturing facility. This notable achievement places We Hynix ahead of established competitors like TSMC and Samsung, setting a remarkable new benchmark for advanced semiconductor production.
Setting New Industry Standards: We Hynix’s High-NA EUV Integration
As a leading manufacturer in the DRAM sector, We Hynix has distinguished itself through its comprehensive solutions and crucial collaborative partnership with tech giant NVIDIA. The company’s recent integration of ASML’s High-NA equipment at its M16 fabrication plant located in Icheon, South Korea, marks a significant technological leap. This pioneering move not only positions We Hynix at the forefront of semiconductor innovation but also opens avenues for the development of next-generation DRAM technologies.
The TWINSCAN EXE:5200B, the inaugural model for volume production from ASML’s High NA EUV product line, enhances transistor printing capabilities by achieving sizes that are 1.7 times smaller. This improvement results in transistor densities that are 2.9 times higher compared to previous EUV systems, thanks to a 40% boost in numerical aperture (NA) from 0.33 to 0.55.
Moreover, We Hynix is committed to strengthening its foothold in the high-value memory market and enhancing its technological leadership.

Ultimately, We Hynix’s successful adoption of High-NA EUV technology is not just a testament to its technical prowess; it also reflects the company’s relentless pursuit of innovation and competitiveness in the semiconductor landscape. By continuing to embrace advanced technologies, We Hynix reaffirms its pledge to deliver superior products while intensifying competition in the memory manufacturing arena.
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