SK hynix Developing High Bandwidth Storage (HBS) with Stacked DRAM & NAND Chips to Enhance AI Performance in Smartphones and Tablets

SK hynix is set to revolutionize data processing speeds by stacking up to 16 layers of DRAM and NAND chips, utilizing an innovative technology known as vertical wire fan-out (VFO).This advancement is crucial for enhancing performance in various electronic devices.

VFO Enhances Data Transmission Efficiency

As reported by ETNews, the success of High Bandwidth Storage (HBS) depends heavily on the VFO packaging method. Introduced in 2023 by We hynix, this technology connects DRAM and NAND chip stacks in a straight configuration rather than using conventional curved wire bonding. This configuration minimizes data transmission losses and enhances the efficiency of data transfer, which is particularly relevant as generative AI becomes more prevalent in smartphones and tablets.

SK Hynix developing High Bandwidth Storage to boost AI performance in smartphones and tablets — Implementation of High Bandwidth Storage in modern devices.

The advantages of VFO are notable. By significantly reducing wiring distances and minimizing signal transmission loss and delays, VFO facilitates a greater number of I/O connections. This combination of improvements leads to a significant increase in data processing performance. HBS is designed to work seamlessly with smartphone chipsets, which will be integrated onto the device’s logic board. While details on supported System-on-Chips (SoCs) remain scarce, the Snapdragon 8 Elite Gen 6 Pro is anticipated to support both LPDDR6 and UFS 5.0 technologies, making it a strong candidate for HBS.

Cost Implications of High Bandwidth Storage for Manufacturers

One of the most significant benefits of HBS is its reduced manufacturing cost compared to High Bandwidth Memory (HBM).Unlike HBM that requires Through Silicon Via (TSV) technology, which involves physically penetrating the chip, HBS circumvents this need. Consequently, this leads to enhanced production yields and lower overall costs, which is likely to appeal to manufacturers looking to implement this storage solution.

In contrast, Apple is reportedly planning to utilize HBM and TSV for its upcoming devices, aiming to enable more robust AI functionalities locally on the iPhone. Given this context, it is not surprising that Apple is already investigating HBS as a potential storage option for future models.

For further details, visit the ETNews report.

For more information and images, check the Wccftech source.