SK hynix Begins Mass Production of 321-Layer QLC NAND Flash for PCs with Innovative 32-Layer Stacking Technology

SK hynix has officially announced the commencement of mass production for its groundbreaking 321-layer QLC NAND Flash storage solution, which features a remarkable stacking capacity of up to 32 layers.

Unveiling We hynix’s 321-Layer QLC NAND Flash: A New Era in Storage Technology

This development represents a significant milestone, as it is the first instance globally to implement over 300 layers using QLC (Quad-Level Cell) technology, setting an unprecedented standard for NAND flash density. The company aims to launch this innovative product in the first half of the upcoming year, pending successful validation from global customers.

“We will make a major leap forward as a full-stack AI memory provider, in line with the explosive growth in AI demand and high-performance requirements in the data center market.”

Front and back view of SK hynix memory chip, model H25T4QM88G.

To counter potential performance issues that often accompany large-capacity NAND technologies, We hynix has enhanced its design by increasing the number of planes—independent operational units within a chip—from 4 to 6. This modification not only facilitates greater parallel processing but also significantly improves simultaneous read capabilities.

The advancements presented by the 321-layer QLC NAND allow for enhanced capacity and superior performance metrics compared to earlier QLC iterations. Notably, data transfer speeds have seen a twofold increase, with write performance enhanced by up to 56% and read performance improved by 18%.Additionally, write power efficiency has surged by over 23%, a crucial factor for maintaining competitiveness in AI-focused data centers where power conservation is essential.

Initially, We hynix plans to integrate its 321-layer NAND technology into PC SSDs, with plans for subsequent deployment in enterprise SSDs (eSSDs) for data centers and Universal Flash Storage (UFS) solutions for smartphones.

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