Samsung Partners with US Silicon Manufacturer to Boost 3nm GA Yield

Samsung announced it would start manufacturing on a 3nm (3nm) process using ” GAA architecture ” in July earlier this year, but according to the latest reports from the Commercial Times , the company is struggling with a staggering 20% ​​yield.

The initial press release for the 3nm GAA node stated, “The optimized 3nm process provides a 45% reduction in power consumption, a 23% improvement in performance, and a 16% smaller surface area compared to the 5nm process.” However, Samsung failed to meet targets, causing many enterprise customers to switch to alternative, more efficient silicon components such as TSMC ‘s 5nm node , despite TSMC using the previous generation technology.

Samsung bets on Silicon Frontline technology to help achieve higher 3nm GAA performance

The performance-degrading Achilles heel of Samsung’s 3nm GAA node is a runaway electrostatic discharge. Silicon Frontline Technology has developed proven methods to improve the performance of 3nm nodes through the use of ESD prevention and water purification technologies.

Some progress has been made and Samsung intends to re-establish its venture with Qualcomm after the company left Samsung for TSMC due to the failure of its 4nm node. According to Twitter user Connor , Samsung recently partnered with AMD and Google to develop a high-performance smartphone chip design for its upcoming 3nm flagship.

TSMC also announced a $12 billion plant in Arizona solely to manufacture the 3nm process. As competition between the two semiconductor giants intensifies, Samsung could potentially lose its corporate customers if its partnership with Silicon Frontline Technology does not improve margins.

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