Samsung Electronics Showcases Disruptive Next-Gen 3D DRAM Tech, Launch Aimed at 2025+

Samsung Electronics is aiming to break into the emerging 3D DRAM market by showcasing cutting-edge technologies that will drive market progress in the future.

Samsung Leads the Way in 3D DRAM Technology, Set to Launch Solutions by End of Decade

Despite a period of relative calm in the DRAM industry, companies were still facing the challenges of a tight financial situation due to high inventory and low consumer demand in recent quarters.

With the situation now improved, efforts have shifted towards next-generation R&D. Samsung has announced their own 3D DRAM implementation, which is expected to be implemented within the next year.

After examining the presentation slides, it is evident that the DRAM industry is transitioning towards sub-10nm compression lines. In order to overcome the stagnation in developing advanced DRAM technologies, Samsung intends to implement two novel techniques, Vertical Channel Transistors and Stacked DRAM, which involve variations in component placement. These innovative methods ultimately lead to reduced device area usage and consequently, improved performance.

In a similar fashion, Samsung intends to enhance memory capacities by utilizing the stacked DRAM concept. This approach enables the company to achieve a higher storage-to-area ratio, potentially increasing chip capacities to 100 GB in the future. It is projected that the 3D DRAM market could reach $100 billion by 2028. Samsung’s early developments suggest that the Korean company may take the lead in the DRAM industry moving forward, although it is still too soon to make such a prediction.