Samsung Challenges SK Hynix and Micron by Launching HBM4 Memory for the First Time

Samsung Challenges SK Hynix and Micron by Launching HBM4 Memory for the First Time

Samsung has made headlines by publicly unveiling its HBM4 memory modules, signaling its readiness to enter the competitive landscape of high-bandwidth memory (HBM) technology.

Samsung’s HBM4 Production and Yield Prospects

As one of the premier components in contemporary computing, HBM4 is pivotal in enhancing artificial intelligence (AI) performance. Samsung, having resurrected its position in the HBM market after a period of decline, presented its HBM4 innovations at the Semiconductor Exhibition (SEDEX) 2025. This marks a significant return to form for the tech giant.

HBM3E and HBM4 models displayed at a tech exhibition with the text 'pushing the boundaries' visible.
Image Credits: Yonhap

Learning from previous setbacks in the DRAM market, Samsung aims to ensure its competitiveness by ramping up HBM4 production alongside its rivals. A report from DigiTimes suggests that the logic die yield for HBM4 has impressively reached 90%.This achievement positions Samsung favorably for mass production, with no significant delays expected at this stage.

While Samsung has yet to secure approval from NVIDIA for HBM4 supply, its advancements in this technology instill a sense of optimism regarding future partnerships.

HBM4 High Bandwidth Memory showcased on screen with specifications, while someone captures the moment with a smartphone.

As Samsung accelerates its development, the DRAM market is poised to become increasingly competitive. The heightened demand for high-performance memory solutions suggests a market dynamic that has not been observed before, prompting both excitement and caution among industry players.

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