
Micron Technology has recently announced a significant advancement in the memory market by shipping the fastest-ever 11 Gbps High Bandwidth Memory (HBM4) DRAM, along with detailing their partnership with TSMC for the development of the next-generation HBM4E.
Industry-Leading HBM4 Technology and New Partnerships
During its latest Q4 and FY2025 earnings call, Micron unveiled key updates regarding their DRAM and NAND Flash segments. The company reported impressive financial results, achieving revenues of $11.32 billion for the quarter, a notable increase from $9.30 billion in the previous quarter. Moreover, the total revenue for the fiscal year surged from $25.11 billion to an impressive $37.38 billion. As the company aims to further enhance its performance, they are focusing on next-gen memory solutions.


Touching on the HBM4 development, Micron shared that its 12-Hi HBM4 DRAM solution is well-positioned to meet the escalating performance demands within the industry. The company has successfully shipped the initial samples of its high-performance HBM4, boasting pin speeds exceeding 11 Gbps and a remarkable bandwidth of 2.8 TB/s. Micron asserts that its HBM4 memory will lead the market in both performance and efficiency, outpacing all competitors.
We are pleased to note that our HBM share is on track to grow again and be in line with our overall DRAM share in this calendar Q3, delivering on our target that we have discussed for several quarters now. Micron Technology’s HBM4 12-hi remains on track to support customer platform ramps, even as the performance requirements for HBM4 bandwidth and pin speeds have increased.
We have recently shipped customer samples of our HBM4 with industry-leading bandwidth exceeding 2.8 TB/s and pin speeds over 11 Gbps. We believe Micron Technology’s HBM4 outperforms all competing HBM4 products, delivering industry-leading performance as well as best-in-class power efficiency. Our proven 1-gamma DRAM, innovative and power-efficient HBM4 design, in-house advanced CMOS base die, and advanced packaging innovations are key differentiators enabling this best-in-class product.
Sanjay Mehrotra – Micron President & CEO
In addition to HBM4, Micron also discussed the forthcoming HBM4E memory. This new variant will feature collaboration with TSMC for the manufacturing of the base logic die, differing from the fully in-house developed HBM4. Both standard and custom variants of HBM4E are in the works, with a projected launch in 2027.
For HBM4E, Micron Technology will offer standard products as well as customization options for the base logic die. We are partnering with TSMC for manufacturing the HBM4E base logic die for both standard and customized products. Customization requires close collaboration with customers, and we expect HBM4E with customized base logic dies to deliver higher gross margins than standard HBM4E. Our HBM customer base has expanded and now includes six customers.
We have pricing agreements with almost all customers for a vast majority of our HBM3E supply in calendar 2026. We are in active discussions with customers on the specifications and volumes for HBM4, and we expect to conclude agreements to sell out the remainder of our total HBM calendar 2026 supply in the coming months.
Sanjay Mehrotra – Micron President & CEO

Additionally, Micron highlighted its collaboration with NVIDIA for the introduction of LPDDR memory in data centers, positioning itself as the exclusive supplier of this memory type. The company also announced advancements in GDDR7 memory aimed at both AI and client applications, anticipating speeds to exceed 40 Gbps in future models. Presently, NVIDIA is the sole GPU manufacturer utilizing GDDR7 technology, with the initial rollout at 32 Gbps pin speeds.
In close collaboration with NVIDIA, Micron has pioneered the adoption of LPDRAM for servers, and since NVIDIA’s launch of LPDRAM in their GB product family, Micron has been the sole supplier of LPDRAM in the data center. In addition to our leadership in HBM and LP5, Micron is also well-positioned with our GDDR7 products, which are designed to deliver ultra-fast performance with pin speeds exceeding 40 Gbps, along with best-in-class power efficiency to address the needs of certain future AI systems.
Sanjay Mehrotra – Micron President & CEO
Lastly, exciting developments are underway regarding Micron’s 1γ DRAM node, achieving mature yields significantly faster than previous generations—approximately 50% quicker. The company is also progressing well with their G9 NAND production, affirming their leadership with the introduction of PCIe Gen6 SSDs in data centers, and promising more innovative solutions powered by 16Gb 1γ DRAM.
Leave a Reply