Micron Unveils 12-High HBM3E and LPDDR5X SOCAMM for Enhanced NVIDIA High Performance Chips

Micron Technology is once again at the forefront of memory innovations, collaborating with NVIDIA to provide advanced memory solutions tailored for high-performance computing. Notably, these products will enhance chips such as the HGX B300 NVL16 and GB300 NVL72, marking a significant advancement in memory technology.

Micron’s Cutting-Edge Memory Solutions: Introducing 12H HBM3E and SOCAMM Memory for AI Performance Enhancement

Among the pivotal releases is Micron’s LPDDR5X SOCAMM (Small Outline Compression Attached Memory Module), designed specifically for NVIDIA’s GB300 Grace Blackwell Ultra Superchip. Complementing this, Micron’s 12H HBM3E 36 GB memory chip will power NVIDIA’s HGX B300 NVL16 and GB300 NVL72 platforms, significantly boosting their efficiency.

Micron HBM3E 12H 36GB — Image Credit: micron.com

These newly unveiled Blackwell chips by NVIDIA, showcased at the recent GTC event, leverage Micron’s formidable 8-High 24 GB HBM3E chips for their HGX B200 and GB200 NVL72 models. The new 12-High HBM3E memory configuration stacks 12 DRAM dies vertically, allowing it to deliver an impressive 12 GB more memory capacity compared to its 8-High counterpart. Such enhancements are crucial for memory-heavy AI operations, enabling GPUs to handle substantial workloads with a memory increase of 50%, ultimately allowing entire AI models like Meta’s Llama 405B to be processed on a single GPU.

Moreover, the 12H HBM3E memory brings not just additional capacity but also improved bandwidth while consuming 20% less power. This efficiency is particularly beneficial for data center operations, where both performance and power savings play critical roles.

Micron SOCAMM — Image Credit: micron.com

The LPDDR5X-based SOCAMM stands out as an excellent choice for high-performance computing (HPC).With its compact dimensions of just 14x90mm, it occupies merely a third of the space required by traditional RDIMMs and can support up to 128 GB per module through 16-die stacks of LPDDR5X memory. Its design not only optimizes space but also offers more than 2.5 times the bandwidth while exhibiting significantly greater power efficiency than standard RDIMMs.

Currently, Micron boasts a robust portfolio, including GDDR7 memory for NVIDIA’s Blackwell RTX 50 series GPUs, high-capacity DDR5 RDIMMs and MRDIMMs, alongside HBM3E and SOCAMM technologies. Additionally, Micron’s cutting-edge storage solutions, such as the Micron 9550 NVMe and 7450 NVMe SSDs, further reinforce their leadership in memory and storage technology. Meanwhile, competition includes Samsung’s recently launched flagship 9100 PRO SSD, which utilizes the PCI-E 5.0 standard to achieve astounding sequential read speeds of up to 14, 800 MB/s.

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