Intel Foundry Introduces Innovative Strategies for Transistor and Packaging Technologies to Improve Silicon Scalability

Intel Foundry has recently unveiled significant advancements in transistor and packaging technologies during the IEEE International Electron Devices Meeting (IEDM) 2024. These innovations represent crucial developments in materials and silicon technology that promise to enhance the semiconductor landscape.

Unveiling Innovations in Transistor Technologies

During the conference, Intel Foundry highlighted its pioneering work in “subtractive ruthenium”and other transistor technologies aimed at scaling capabilities for future semiconductor nodes. These breakthroughs are positioned to push the boundaries of what is possible in chip design and manufacturing.

The Importance of These Developments

As we head toward the ambitious target of integrating 1 trillion transistors on a single chip by 2030, enhancing transistor efficiency and interconnect scalability becomes more crucial than ever. With the growing demand for energy-efficient and high-performance processing—especially in applications like artificial intelligence (AI)—these innovations hold the key to meeting future challenges.

Strategies for Overcoming Current Limitations

Intel Foundry is actively addressing the limitations associated with copper transistors by exploring alternative materials and refining existing assembly techniques. The following strategies were introduced to foster innovation in semiconductor technology:

Subtractive Ruthenium (Ru): This new metallization material utilizes thin film resistivity and airgaps to enhance chip interconnections. Intel Foundry demonstrated a cost-effective and manufacturable process of subtractive Ru that achieves a remarkable 25% reduction in line-to-line capacitance, particularly at pitches of 25 nanometers or less, suggesting its potential to replace traditional copper solutions.
Selective Layer Transfer (SLT): This groundbreaking approach enables ultra-fast chip-to-chip assembly, boasting a throughput increase by up to 100 times. SLT allows for the integration of ultra-thin chiplets, which enhances flexibility and reduces costs in various applications.
Silicon RibbonFET CMOS: By showcasing silicon RibbonFET CMOS transistors with a 6 nm gate length, Intel Foundry is pushing the limits of gate-all-around scaling, which is crucial for maintaining Moore’s Law.
Gate Oxide for Scaled GAA 2D FETs: Intel’s advancements in gate oxide development for GAA devices aim to enhance performance with gate lengths as short as 30 nm. The exploration of two-dimensional transition metal dichalcogenide (TMD) semiconductors could potentially transform future transistor technologies.

Breakthroughs in Gallium Nitride Technology

Intel Foundry has also made strides by developing the industry’s first 300 mm gallium nitride (GaN) technology, which serves as a powerful alternative for RF and power electronics. This technology promises greater performance, particularly in applications requiring high voltage and temperature tolerance.

Future Directions in Semiconductor Innovation

As part of its vision shared at IEDM 2024, Intel Foundry outlined a roadmap focused on key innovation areas essential for advancing packaging and transistor scaling directed towards AI applications:

Integration of advanced memory to mitigate capacity, latency, and bandwidth constraints.
Implementation of hybrid bonding techniques to optimize interconnect bandwidth.
Expansion of modular systems paired with innovative connectivity solutions.

A Call to Action

Intel Foundry’s commitment to developing revolutionary technologies is underscored by its goal to produce transistors that operate at ultra-low voltage (below 300 millivolts). This initiative aims to tackle thermal challenges and improve energy efficiency significantly.

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